The BSS138 is an SMD Package (SOT23) Logic Level N-Channel MOSFET with drain current of 170mA and Drain Source Voltage of 100V. The MOSFET also has.
N Channel Mosfet Symbol
- 65W N-Channel MOSFET Amplifier Circuit symmetric + -34 volt supply voltage of 68V dc sprint layout prepared by total PCBs to output file open and free.
- FDMC8884 N-Channel MOSFET 30V.
Class leading resistance, gate charge enabling high frequency, higher power density
TI’s N-channel MOSFET transistors improve control of voltage and current for a wide range of power supply design needs, including high switching frequencies. Our N-channel MOSFETS enable smaller form factors to help you maximize power density and reduce PCB footprint by more than 50%.
≤30 V
Design with a low-voltage N-channel MOSFET. Choose among ≤30-V devices.
40 V to 100 V
N Channel Mosfet Image
Design with a mid-voltage N-channel MOSFET. Choose among 40-V to 100-V devices.
FemtoFET™ MOSFET
Ideal for mobile handsets, tablets, and any other application where saving board space and extending battery life are required.
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см. техническую документацию
Описание
Технические параметры
| Maximum Operating Temperature | +200 °C |
| Number of Elements per Chip | 1 |
| Length | 4.06mm |
| Transistor Configuration | Single |
| Brand | Semelab |
| Maximum Continuous Drain Current | 2 A |
| Package Type | SOIC |
| Maximum Power Dissipation | 30 W |
| Series | TetraFET |
| Mounting Type | Surface Mount |
| Width | 5.08mm |
| Maximum Gate Threshold Voltage | 5V |
| Height | 2.18mm |
| Maximum Drain Source Voltage | 65 V |
| Pin Count | 8 |
| Dimensions | 4.06 x 5.08 x 2.18mm |
| Category | RF MOSFET |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Typical Input Capacitance @ Vds | 24 pF @ 0 V |
| Channel Type | N |
| Maximum Gate Source Voltage | -20 V, +20 V |
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